d d ata sheet product specification april 2004 discrete semiconductors bt151x series c thyristors
semiconductors product specification thyristors bt151x series c general description quick reference data passivated thyristors in a full pack, symbol parameter max. max. max. unit plastic envelope, intended for use in applications requiring high bt151x- 500c 650c 800c bidirectional blocking voltage v drm , repetitive peak off-state 500 650 800 v capability and high thermal cycling v rrm voltages performance. typical applications i t(av) average on-state current 7.5 7.5 7.5 a include motor control, industrial i t(rms) rms on-state current 12 12 12 a and domestic lighting, heating and i tsm non-repetitive peak 100 100 100 a static switching. on-state current pinning - sot186a pin configuration symbol pin description 1 cathode 2 anode 3 gate case isolated limiting values limiting values in accordance with the absolute maximum system (iec 60134). symbol parameter conditions min. max. unit -500c -650c -800c v drm , v rrm repetitive peak off-state - 500 1 650 1 800 v voltages i t(av) average on-state current half sine wave; t hs 69 ?c - 7.5 a i t(rms) rms on-state current all conduction angles - 12 a i tsm non-repetitive peak half sine wave; t j = 25 ?c prior to on-state current surge t = 10 ms - 100 a t = 8.3 ms - 110 a i 2 ti 2 t for fusing t = 10 ms - 50 a 2 s di t /dt repetitive rate of rise of i tm = 20 a; i g = 50 ma; - 50 a/s on-state current after di g /dt = 50 ma/s triggering i gm peak gate current - 2 a v rgm peak reverse gate voltage - 5 v p gm peak gate power - 5 w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature -40 150 ?c t j junction temperature - 125 ?c ak g 12 3 case 1 although not recommended, off-state voltages up to 800v may be applied without damage, but the thyristor may switch to the on-state. the rate of rise of current should not exceed 15 a/s. april 2004 1 rev 1.000
semiconductors product specification thyristors bt151x series c isolation limiting value & characteristic t hs = 25 ?c unless otherwise specified symbol parameter conditions min. typ. max. unit v isol r.m.s. isolation voltage from all f = 50-60 hz; sinusoidal - - 2500 v three terminals to external waveform; heatsink r.h. 65% ; clean and dustfree c isol capacitance from pin 2 to f = 1 mhz - 10 - pf external heatsink thermal resistances symbol parameter conditions min. typ. max. unit r th j-hs thermal resistance with heatsink compound - - 4.5 k/w junction to heatsink without heatsink compound - - 6.5 k/w r th j-a thermal resistance in free air - 55 - k/w junction to ambient static characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit i gt gate trigger current v d = 12 v; i t = 0.1 a - 2 15 ma i l latching current v d = 12 v; i gt = 0.1 a - 10 40 ma i h holding current v d = 12 v; i gt = 0.1 a - 7 20 ma v t on-state voltage i t = 23 a - 1.44 1.75 v v gt gate trigger voltage v d = 12 v; i t = 0.1 a - 0.6 1.5 v v d = v drm(max) ; i t = 0.1 a; t j = 125 ?c 0.25 0.4 - v i d , i r off-state leakage current v d = v drm(max) ; v r = v rrm(max) ; t j = 125 ?c - 0.1 0.5 ma dynamic characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit dv d /dt critical rate of rise of v dm = 67% v drm(max) ; t j = 125 ?c; off-state voltage exponential waveform gate open circuit 50 130 - v/ s r gk = 100 200 1000 - v/ s t gt gate controlled turn-on i tm = 40 a; v d = v drm(max) ; i g = 0.1 a; - 2 - s time di g /dt = 5 a/s t q circuit commutated v d = 67% v drm(max) ; t j = 125 ?c; - 70 - s turn-off time i tm = 20 a; v r = 25 v; di tm /dt = 30 a/s; dv d /dt = 50 v/s; r gk = 100 april 2004 2 rev 1.000
semiconductors product specification thyristors bt151x series c fig.1. maximum on-state dissipation, p tot , versus average on-state current, i t(av) , where a = form factor = i t(rms) / i t(av) . fig.2. maximum permissible non-repetitive peak on-state current i tsm , versus pulse width t p , for sinusoidal currents, t p 10ms. fig.3. maximum permissible rms current i t(rms) , versus heatsink temperature t hs . fig.4. maximum permissible non-repetitive peak on-state current i tsm , versus number of cycles, for sinusoidal currents, f = 50 hz. fig.5. maximum permissible repetitive rms on-state current i t(rms) , versus surge duration, for sinusoidal currents, f = 50 hz; t hs 69?c. fig.6. normalised gate trigger voltage v gt (t j )/ v gt (25?c), versus junction temperature t j . 02468 0 5 10 15 1.9 2.2 2.8 4 i t(av) (a) p tot (w) t hs(max) (c) 125 102.5 80 57.5 30 4 conduction angle form 60? 90? 120? 180? (a) 2.8 2.2 1.9 1.57 factor () 30? 4.0 a = 1.57 1 10 100 1000 0 20 40 60 80 100 120 number of half cycles at 50hz itsm / a t i tsm time i tj initial = 25 c max t 10 100 1000 10us 100us 1ms 10ms t / s itsm / a t i tsm time i tj initial = 25 c max t di /dt limit t 0.01 0.1 1 10 0 5 10 15 20 25 surge duration / s it(rms) / a -50 0 50 100 150 0 2 4 6 8 10 t hs ( c) i t(rms) (a) 69 c 12 14 -50 0 50 100 150 0.4 0.6 0.8 1 1.2 1.4 1.6 tj / c vgt(tj) vgt(25 c) april 2004 3 rev 1.000
semiconductors product specification thyristors bt151x series c fig.7. normalised gate trigger current i gt (t j )/ i gt (25?c), versus junction temperature t j . fig.8. normalised latching current i l (t j )/ i l (25?c), versus junction temperature t j . fig.9. normalised holding current i h (t j )/ i h (25?c), versus junction temperature t j . fig.10. typical and maximum on-state characteristic. fig.11. transient thermal impedance z th j-hs , versus pulse width t p . fig.12. typical, critical rate of rise of off-state voltage, dv d /dt versus junction temperature t j . -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 tj / c igt(tj) igt(25 c) 0 0.5 1 1.5 2 0 10 20 30 v t (v) i t typ max (a) v o = 1.06 v r s = 0.0304 ohms t j = 125 c t j = 25 c -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt145 tj / c il(tj) il(25 c) 0.001 0.01 0.1 1 10 tp / s zth j-hs (k/w) 10us 0.1ms 1ms 10ms 0.1s 1s 10s t p p t d without heatsink compound with heatsink compound -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 tj / c ih(tj) ih(25 c) 0 50 100 150 10 100 1000 10000 tj / c dvd/dt (v/us) gate open circuit rgk = 100 ohms april 2004 4 rev 1.000
semiconductors product specification thyristors bt151x series c mechanical data dimensions in mm net mass: 2 g fig.13. sot186a; the seating plane is electrically isolated from all terminals. notes 1. refer to mounting instructions for f-pack envelopes. 2. epoxy meets ul94 v0 at 1/8". 10.3 max 3.2 3.0 4.6 max 2.9 max 2.8 seating plane 6.4 15.8 max 0.6 2.5 2.54 5.08 12 3 3 max. not tinned 3 0.5 2.5 0.9 0.7 m 0.4 15.8 max. 19 max. 13.5 min. recesses (2x) 2.5 0.8 max. depth 1.0 (2x) 1.3 april 2004 5 rev 1.000
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